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By David Johns Ken Martin

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6, which is the largest voltage gain this single transistor can achieve for these operating bias conditions. 6 is much smaller than the corresponding single-transistor gain in a bipolar transistor. 4 x 10' xTLl ; 170 kQ ~A An alternate low-frequency model, known as a T model, is shown in Fig. 19. This T model can often result in simpler equations and is most often used by experienced designers for a quick analysis. At first glance, it might appear that this model allows for nonzero gate current, but a quick check confirms that the drain current must always equal the source current, and, therefore, the gate current must always be zero.

97) Note that the total area of the effective source includes the original area of the junction (when no channel is present) plus the effective area of the channel. The depletion capacitance of the drain is smaller because it does not include the channel area. 99) OB 1+

The n- epitaxial region is so named because it is epitaxially grown on a p region. Most of the charge storage occurs in this region. Also, additional charge storage occurs because electrons that diffused from the collector are stored in the base, but this charge is normally smaller. 137) where the base overdrive current, defined to be Is - Ie/~, is approximately equal to the hole current from the base to the collector. 138) The constant ~s is approximately equal to the epitaxial-region transit time, ~E (ignoring the storage of electrons in the base that diffused from the collector).

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